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MAX1978/MAX1979
Integrated Temperature
Controllers for Peltier Modules
ABSOLUTE MAXIMUM RATINGS
V DD to GND ..............................................................-0.3V to +6V
SHDN , MAXV, MAXIP, MAXIN,
CTLI, OT , UT to GND............................................-0.3V to +6V
FREQ, COMP, OS1, OS2, CS, REF, ITEC, AIN+, AIN-,
AOUT, INT-, INTOUT, BFB+, BFB-, FB+, FB-,
DIFOUT to GND......................................-0.3V to (V DD + 0.3V)
PV DD 1, PV DD 2 to V DD ...........................................-0.3V to +0.3V
PV DD 1, PV DD 2 to GND...............................-0.3V to (V DD + 0.3V)
PGND1, PGND2 to GND .......................................-0.3V to +0.3V
COMP, REF, ITEC, OT , UT , INTOUT, DIFOUT,
BFB-, BFB+, AOUT Short to GND .............................Indefinite
Peak LX Current (MAX1978) (Note 1).................................±4.5A
Peak LX Current (MAX1979) (Note 1)....................................+9A
Continuous Power Dissipation (T A = +70°C)
48-Lead Thin QFN-EP
(derate 26.3mW/°C above +70°C) (Note 2) .................2.105W
Operating Temperature Ranges
MAX1978ETM ..................................................-40°C to +85°C
MAX1979ETM ..................................................-40°C to +85°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1: LX has internal clamp diodes to PGND and PV DD . Applications that forward bias these diodes should not exceed the IC’s
package power dissipation limits.
Note 2: Solder underside metal slug to PCB ground plane.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V DD = PV DD 1 = PV DD 2 = V SHDN = 5V, FREQ = GND, CTLI = FB+ = FB- = MAXV = MAXIP = MAXIN = REF, T A = 0°C to +85°C ,
unless otherwise noted. Typical values at T A = +25°C.)
PARAMETER
Input Supply Range
SYMBOL
V DD
CONDITIONS
MIN
3.0
TYP
MAX
5.5
UNITS
V
V DD = 5V, I TEC = 0 to ±3A,
V OUT = V OS1 - V OS2 (MAX1978)
-4.3
+4.3
Output Voltage Range
V OUT
V DD = 5V, I TEC = 0 to 6A,
V OUT = V OS1 (MAX1979)
V DD = 3V, I TEC = 0 to ±3A,
V OUT = V OS1 - V OS2 (MAX1978)
-2.3
4.3
+2.3
V
V DD = 3V, I TEC = 0 to 6A,
V OUT = V OS1 (MAX1979)
2.3
Maximum TEC Current
I TEC(MAX)
MAX1978
MAX1979
± 3
6
A
Reference Voltage
Reference Load Regulation
V REF
? V REF
V DD = 3V to 5.5V, I REF = 150μA
V DD = 3V to 5.5V, I REF = +10μA to -1mA
1.485
1.500
1.2
1.515
5
V
mV
Current-Sense Threshold
V OS1 < V CS
V OS1 > V CS
V MAXI_ = V REF
V MAXI_ = V REF /3
V MAXI_ = V REF
V MAXI_ = V REF /3
135
40
135
40
150
50
150
50
160
60
160
60
mV
NFET On-Resistance
PFET On-Resistance
NFET Leakage
R DS(ON-N)
R DS(ON-P)
I LEAK(N)
V DD = 5V, I = 0.5A
V DD = 3V, I = 0.5A
V DD = 5V, I = 0.5A
V DD = 3V, I = 0.5A
V LX = V DD = 5V, T A = +25 ° C
V LX = V DD = 5V, T A = +85 ° C
0.04
0.06
0.06
0.09
0.02
1
0.07
0.08
0.10
0.12
10
?
?
μA
2
Maxim Integrated
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